Wavelength despersive spectroscopy analysis at high spectral resolution: application to the study of Mo/Si multilayers

摘要: We show that x-ray emission spectroscopy (XES) induced by electrons, analyzed at high spectral resolution a WDS Johann-type spectrometer, is powerful technique to characterize in nondestructive way the interlayers Mo/Si multilayers. The analysis performed using IRIS (Instrument de Recherche sur les Interfaces et Surfaces) apparatus equipped with curved crystal. Within those experimental conditions E/∇E about 2000 1800-1900 eV photon energy range. Because of evolution shape Si Kβ band (3p-1s transition) as function chemical environment atoms easily evidenced. study series multilayers, where thickness layers 2 nm and Mo 1, 2, 3 or 4 nm. It clearly appears from within multilayers different amorphous (a-Si), which should be observed if no diffusion process takes place interfaces. By comparing a-Si molybdenum silicides simple model, we deduce composition interlayers. Their deduced estimated 0.4 ± 0.1 0.8 0.2 depending on samples.