Ion‐implanted Zn diffusion and impurity‐induced disordering of an AlGaAs superlattice
作者： E. P. Zucker , A. Hashimoto , T. Fukunaga , N. Watanabe
DOI: 10.1063/1.100932
关键词:
摘要: The diffusion coefficient of ion‐implanted Zn and the Al‐Ga interdiffusion in an Al0.5Ga0.5As/GaAs superlattice (SL) are extracted from secondary‐ion mass spectroscopy profiles for four times at 750 °C. zinc goes as square concentration, implying local thermal equilibrium, is over 200 smaller than reported values gaseous‐source diffusions 650 °C GaAs. SL disordering rate increases with increasing concentration attributed to positively charged column III interstitials (Ga+mI or Al+mI) m between 2 3.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(13)
P. Mei, H. W. Yoon, T. Venkatesan, S. A. Schwarz, J. P. Harbison, Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices Applied Physics Letters. ,vol. 50, pp. 1823- 1825 ,(1987) , 10.1063/1.97709
T. Y. Tan, U. Gösele, Destruction mechanism of III‐V compound quantum well structures due to impurity diffusion Journal of Applied Physics. ,vol. 61, pp. 1841- 1845 ,(1987) , 10.1063/1.338027
J. W. Lee, W. D. Laidig, Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices Journal of Electronic Materials. ,vol. 13, pp. 147- 165 ,(1984) , 10.1007/BF02659841
C. H. Ting, G. L Pearson, Time‐Dependence of Zinc Diffusion in Gallium Arsenide under a Concentration Gradient Journal of The Electrochemical Society. ,vol. 118, pp. 1454- 1458 ,(1971) , 10.1149/1.2408353
Koji Ishida, Kazunori Matsui, Toshiaki Fukunaga, Takeshi Takamori, Hisao Nakashima, Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering Japanese Journal of Applied Physics. ,vol. 25, pp. L690- L692 ,(1986) , 10.1143/JJAP.25.L690
T. Y. Tan, U. Gösele, Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs Applied Physics Letters. ,vol. 52, pp. 1240- 1242 ,(1988) , 10.1063/1.99168
B Tuck, Mechanisms of atomic diffusion in the III-V semiconductors Journal of Physics D. ,vol. 18, pp. 557- 584 ,(1985) , 10.1088/0022-3727/18/4/002
Kazunori Matsui, Junji Kobayashi, Toshiaki Fukunaga, Koichi Ishida, Hisao Nakashima, Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry Japanese Journal of Applied Physics. ,vol. 25, pp. L651- L653 ,(1986) , 10.1143/JJAP.25.L651
W. D. Laidig, N. Holonyak, M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, J. Bardeen, Disorder of an AlAs‐GaAs superlattice by impurity diffusion Applied Physics Letters. ,vol. 38, pp. 776- 778 ,(1981) , 10.1063/1.92159
Shigeru Semura, Tsuneaki Ohta, Takao Kuroda, Hisao Nakashima, AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide Japanese Journal of Applied Physics. ,vol. 24, pp. L548- L550 ,(1985) , 10.1143/JJAP.24.L548