Method of forming ruthenium oxide films

摘要: A method of forming a ruthenium dioxide film for such purposes as the fabrication stable thin-film resistors microcircuits. The generally entails an inorganic ruthenium-based on substrate, and then thermally decomposing at least portion by exposure to high-intensity beam radiation, preferably visible light, yield substrate. Particular precursors useful include (III) chloride (RuCl3.nH2O) nitrosyl nitrate. does not require thermal treatment that heats bulk substrate which is formed, therefore suitable non-ceramic materials, e.g., polymers those used printed circuit boards (PCBs) flexible circuits.