Anomalous effects on the current‐voltage characteristics of p‐channel metal‐oxide‐semiconductor transistors in the temperature range 4.2–50 K

摘要: The current‐voltage characteristics of p‐channel MOSFETs (metal‐oxide‐semiconductor field‐effect transistors) in the temperature range 4.2‐50 K have been investigated detail. A peak is observed at beginning drain‐current–drain‐voltage (Id, Vd) curves for low Vg values, which not case n‐channel and found to be a very slow transient effect. This time‐dependent temperatures below ∼25 channel lengths greater than ∼3 μm. In this strong hysteresis effect also voltages. above behavior will explained terms depletion layer formation drain region, introduced by large time constant field‐assisted thermal emission carriers n‐type bulk semiconductors ∼20 K. Another effect, analogous ‘‘kink effect’’ 16 K, Vd values. wi...