Energy band diagram of In: ZnO/p-Si structures deposited using chemical spray pyrolysis technique
作者： Marwa Abdul Muhsien Hassan , Arwaa Fadil Saleh , Sabah J Mezher , None
DOI: 10.1007/S13204-013-0246-5
关键词:
摘要: Near-ideal In: ZnO/p-Si heterojunction band edge lineup has been investigated with aid of I-V and C-V measurements. The was manufactured by spray pyrolysis method (Zn (CH3COO)2� 2H2O) at dif- ferent indium doping concentrations on monocrystalline p-type silicon. experimental data the conduction offset DEc valence were com- pared theoretical values. = 0.45 eV DEv 1.65 obtained 300 K. energy diagram HJ con- structed. measurements depict that junction an abrupt type built-in voltage determined from C -2 -V plot.
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