Recent advances on electromigration in very-large-scale-integration of interconnects

作者: K. N. Tu

DOI: 10.1063/1.1611263

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摘要: Today, the price of building a factory to produce submicron size electronic devices on 300 mm Si wafers is over billions dollars. In processing wafer, half production cost comes from fabricating very-large-scale-integration interconnect metallization. The most serious and persistent reliability problem in metallization electromigration. past 40 years, microelectronic industry has used Al as on-chip conductor. Due miniaturization, however, better conductor needed terms resistance–capacitance delay, electromigration resistance, production. turned Cu conductor, so question must be examined. On basis what we have learned use devices, review here current with respect Cu. addition, system interconnects an advanced device includes flip chip solder joints, which now tend ...

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