Preparation and properties of Si/SnO2 heterojunctions
作者： W. Badawy , F. Decker , K. Doblhofer
DOI: 10.1016/0165-1633(83)90002-3
关键词:
摘要: Abstract A combined spray-CVD method is discussed by which SnO 2 films can be prepared reproducibly using the high-temperature hydrolysis reaction of SnCl 4 . Homogeneous good conductivity were obtained when mixture /H O contained only 50% or less stoichiometric amount water. Heterojunctions produced depositing on Si single crystals. For these devices dependence photocurrent-voltage curve was analyzed.
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