Direct writing in polymethyl methacrylate films using near‐ultraviolet light of Ar+laser
作者： S. I. Bozhevolnyi , I. V. Potemkin , V. B. Svetovoy
DOI: 10.1063/1.351146
关键词:
摘要: Direct laser writing of micron‐wide grooves in polymethyl methacrylate (PMMA) films with the scan speed up to 100 μm/s is demonstrated using cw near ultraviolet radiation at 351 and 363 nm. For PMMA film on a silicon substrate we have found that light energy required for complete ablation increases decreasing incident beam power extremely rises when becomes less than 10 mW. It shown groove profile depends process parameters nearly vertical resist walls can be obtained.
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