Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process

摘要: We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform oxidized silicon substrate was achieved by exploiting beneficial features poly(4-vinylphenol) adhesive layer involving strong adhesion energy and negligible influence electronic structural properties graphene. The field effect transistors (FETs) fabricated using process exhibit excellent electrical performance in terms high FET mobility low intrinsic doping level, which proves feasibility our approach graphene-based nanoelectronics.