作者: C. Lu , R.H. Lipson
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摘要: In this review the basic principles of interference lithography (IL) are described. IL is emerging as one of the most powerful yet relatively inexpensive methodologies for creating large‐area patterns with micron‐to sub‐micron periodicities. N‐dimensional periodic structures (N≤ 3) can be obtained by interfering (N+ 1) non‐coplanar beams in a photoresist. The symmetry and shape of the “unit cell” can be conveniently controlled by varying the intensities, geometries, polarizations, and phases of the beams involved. IL done …