Defects induced changes in the electronic structures of MgO and their correlation with the optical properties: a special case of electron–hole recombination from the conduction band

摘要: A detailed investigation on different defects from induced emission characteristics in MgO, which are responsible for the multicolor emissions and lasing property of that material, is presented this report. The color centers characterized by absorption spectroscopy, decay kinetics, a TRES study. Various defect such as oxygen vacancies (e.g., F, F+, , ), cationic (, interstitial Schottky etc., create electronic states inside wide band gap. Density Functional Theory (DFT) based calculation was performed these to characterize their ground band-gap. In photo ionization process F center involved at an excitation wavelength 250 nm, followed equation + hν ↔ F+ e. released electron may prompt into conduction thereby behaves free carrier. Being free, recombine with types positively charged addition newly formed centers. Thus, transitions (CB) empty F- F2-type can be correlated observed components. Recombination hole valence (VB) filled also some behaviors. understanding about all emitting components due various MgO might possible considering those special recombination processes help remove long standing contradiction regarding origin.