Crystal growth of ITO films prepared by DC magnetron sputtering on C film
作者： Hiroshi Morikawa , Haruhiko Sumi , Masayoshi Kohyama
DOI: 10.1016/0040-6090(96)08613-0
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摘要: Abstract ITO thin films have been prepared by DC magnetron sputtering on a carbon film at room temperature. The fine structures of as-deposited and also those after heat treatment 473 K in vacuum observed an electron microscope. is mostly amorphous includes some round shaped nuclei it. nucleation takes place the substrate surface its orientation random. By heat-treatment, each crystal grows without taking habit before entire completely crystallized into grains random crystallization completed or even recrystallizalion
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