Selective thermalization in sputtering to produce high T<inf>c</inf>films

摘要: To understand the sputtering process as a means of producing high T c metastable superconducting compounds we have investigated need for thermalization sputtered atoms they are deposited on substrate. We used low pressure RF to produce Nb 3 Ge with ∼ 22°K pressures 20 mtorr Kr and 45 Ar. test hypothesis that is required effect in been studying systems such Al where thermalize minimum number collisions an admixture Ne optimally atoms. A computer simulation aids choice optimum parameters. If correct then co-evaporation should be able Ge.