作者: Shou-Gwo Wuu , Jen-Cheng Liu , Dun-Nian Yaung , Chen-Shien Chen , Chen-Cheng Kuo
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摘要: The present disclosure provides a method of making an integrated circuit (IC). includes forming electric device on front side substrate; top metal pad the substrate, being coupled to device; passivation layer embedded in layer; opening layer, exposing pad; deep trench filling conductive material and opening, resulting though-wafer via (TWV) feature pad-TWV where connected TWV through feature; applying polishing process remove excessive material, substantially planar surface.