作者: Lawrence K. Dintle , Pearson V.C. Luhanga , Charles Moditswe , Cosmas M. Muiva
DOI: 10.1016/J.PHYSE.2018.01.009
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摘要: Abstract The structural and optoelectronic properties of undoped indium doped zinc oxide (IZO) thin films grown on glass substrates through a simple reproducible custom-made pneumatic chemical spray pyrolysis technique are presented. X-ray diffraction (XRD) results showed polycrystalline structure hexagonal wurtzite phase growing preferentially along the (002) plane for sample. Increase in dopant content modified orientation leading to more pronounced (100) (101) reflections. Optical transmission spectra high transmittance 80–90% visible range all films. optical band gap energy (Eg) was evaluated basis derivative (dT/dλ) versus wavelength (λ) model Tauc's extrapolation method region where absorption coefficient, α ≥ 104 cm−1. observed values Eg were found decrease generally with increasing In concentration. From figure merit calculations sample 4 at.% concentration better properties.