Electron beam induced degradation of a pulsed laser deposited ZnS:Cu,Au,Al thin film on a Si(1 0 0) substrate
作者： K.T. Hillie , H.C. Swart
DOI: 10.1016/S0169-4332(01)00572-4
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摘要: Abstract ZnS:Cu,Au,Al thin film phosphors grown on Si(1 0 0) were subjected to an electron beam irradiation with energies ranging from 1 5 keV and current densities between 16 89 mA at O 2 CO partial pressure of 5×10 −7 Torr . Auger spectroscopy (AES) the cathodoluminescence (CL), both excited by same primary utilised monitor changes in surface composition luminous efficiency films during bombardment, respectively. The degradation mechanism for these reactive gases ambient was manifested depletion S formation a non-luminescent ZnO layer phosphor. more severe under compared which is attributed free energy ZnS when respective are used. rate also depends beam, decreasing increasing energy. This interpreted according ionisation cross-section profile. CL brightness increased exponentially as carriers that will subsequently recombine yielding CL, higher energies.
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