Method of making nonvolatile semiconductor memory
作者： Yoshimitsu Yamauchi
DOI:
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摘要: The nonvolatile semiconductor memory of this invention includes: a substrate; plurality cells formed in matrix on the substrate, each including first insulating film floating gate film, and control via second sandwiched therebetween, source diffusion region, drain region; layer portion substrate located between two adjacent direction, region for one other cell; word line by connecting gates lined direction; bit layers direction substantially perpendicular to wherein have structure which tunnel current flows when predetermined voltage is applied no cell.
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