Design and Characterization of the Ge/Ga2S3 Heterojunction

摘要: In this work, the formation and properties of Ga2S3 thin films deposited onto polycrystalline Ge substrates are studied by means scanning electron microscopy, energy dispersive x-ray analyzer, Raman spectroscopy, diffraction techniques, ultraviolet–visible light spectrophotometry in range 300–1100 nm ac signal power spectroscopy 0.2–3.0 GHz. The first four techniques allowed determining stoichiometry, vibrational frequencies, lattice parameters, plane orientations, strain defect density for interface. addition, it was observed that Ge/Ga2S3 interface exhibited conduction valence band offsets 0.83 eV 0.82 eV, respectively, real part dielectric spectra experimentally resonance peaks centered at frequencies above 357 THz. Moreover, computational analysis imaginary constant via Drude–Lorentz model has shown wave filtering controlled electron–plasmon coupling with plasma 1.33–2.30 drift mobility electrons found to be 15.61 cm2/Vs. ability control propagation confirmed signals propagating tests. plasmonic features nominate use microwave cavities as wireless terahertz receivers.