High‐Temperature Defect Structure and Electrical Properties of NiO

摘要: The electrical conductivity and the Seebeck coefficient of single‐crystal polycrystalline NiO were measured as a function temperature oxygen partial pressure over large part phase field stable NiO. In range 1000°–1600°C was found to be proportional fourth root pressure. This dependence is that which one would expect for pure, nonstoichiometric containing singly ionized metal vacancies predominant point defects. activation energy conduction, ΔHc, computed from σ = σ0exp (−ΔHc / kT), 0.92 ± 0.02 eV. p type entire temperatures pressures measured. From coefficient, enthalpy formation defects in calculated 0.66 ± 0.03 it...