Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing.

摘要: For future nanoelectronic devices - such as room-temperature single electron transistors the site-controlled formation of Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate NCs via medium-energy Si+ or Ne+ ion beam mixing into buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted gain atomistic insight influence relevant experimental parameters on NC process. Energy-filtered transmission microscopy performed obtain quantitative values size distribution in dependence stack geometry, fluence thermal budget. Employing focused from helium microscope, demonstrate self-assembly NCs. Line irradiation with 3000 Ne+/nm2 line width 4 nm leads chain NCs, 2.2 diameter subsequently isolated visualized few nanometer thin lamella prepared (FIB). The centered between layers perpendicular incident beam.