Cl atom recombination on silicon oxy-chloride layers deposited on chamber walls in chlorine–oxygen plasmas

摘要: Chlorine atom recombination coefficients were measured on silicon oxy-chloride surfaces deposited in a chlorine inductively coupled plasma (ICP) with varying oxygen concentrations, using the spinning wall technique. A small cylinder embedded walls of reactor chamber was rapidly rotated, repetitively exposing its surface to and differentially pumped analysis housing quadruple mass spectrometer for line-of-sight desorbing species detection, or an Auger electron situ analysis. The frequency varied from 800 30 000 rpm resulting detection time, t (the time point takes rotate position facing spectrometer), ∼1–40 ms. Desorbing Cl2, due Langmuir–Hinshelwood (LH) Cl surfaces, detected by also pressure rise one chambers. LH recombination...