MoSx thin films by thermolysis of a single-source precursor

摘要: Thin films of MoS x have been prepared on silicon substrates by spin coating and thermolysis 0.5 M solutions alkyldiammonium tetrathiomolybdates in 1,2-ethanediamine (EDA) 1,2-propanediamine (12PDA). The heat treated air at temperatures between 80 250°C under N2 atmosphere 300 800°C. X-ray diffraction shows a restricted crystallisation amorphous residues both kind films. EDA-based exhibit high tendency to crystallise whereas 12PDA-based form associated structures with the solvent preventing precursor crystallisation. An insight into processes occurring film formation is gained infrared spectroscopy which indicates beginning decomposition as low 80°C incorporation diamine solvent. In contrast, show first signs 150°C. intermediate MoS3 cases starts 250 300°C. By means SNMS depth profiles carbon contents up 21 32 atom-% were found EDA- films, respectively. significant deficit sulphur compensated carbon. Near surface coatings loss observed.