Highly Integrated Wafer Level Packaged MOX Gas Sensors
作者： D. Briand , L. Guillot , S. Raible , J. Kappler , N.F. de Rooij
DOI: 10.1109/SENSOR.2007.4300654
关键词:
摘要: This communication presents the miniaturization and wafer level packaging (WLP) of micromachined metal-oxide (MOX) gas sensors. A combination deep reactive ion etching silicon(DRIE) combined with a drop coating sensitive material allows direct WLP MOX sensors on silicon. Compared to standard where films are integrated top dielectric membranes, here we propose integration underneath membrane in cavity silicon wafer. Using this process, can be easily packaged at by sealing drops cavities permeable membrane. concept liquid-tight sensor devices, protecting them during dicing later application, while still allowing target gases reach sensing layer. Miniaturized low-power area reduced 100 times mum2 power consumption less than 20 mW 300degC were realized.
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