摘要: Silicon ${\mathit{L}}_{2,3}$ absorption spectra are obtained by spatially resolved electron-energy-loss spectroscopy as a function of distance away from the buried Al/Si(111) interface. Within 0.6 nm, scattering below bulk threshold is observed, accompanied changes in shape above threshold. In silicon, where core hole well screened, these variations signify local density states and conduction-band edge on scale about 0.3 eV. The results discussed within framework metal-induced-gap-states model.
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