CO2-Laser-Induced Growth of Epitaxial Graphene on 6H-SiC(0001)

摘要: The thermal decomposition of SiC surface provides, perhaps, the most promising method for epitaxial growth graphene on a material useful in electronics platform. Currently, efforts are focused reliable large-area, low-strain that is still lacking. Here, novel fast, single-step large-area homogeneous film SiC(0001) using an infrared CO2 laser (10.6 μm) as heating source reported. Apart from enabling extreme and cooling rates, which can control stacking order graphene, this cost-effective it does not necessitate pre-treatment and/or high vacuum, operates at low temperature proceeds second time scale, thus providing green solution to EG fabrication means engineering patterns by beams. Uniform, low–strain demonstrated scanning electron microscopy, X-ray photoelectron spectroscopy, secondary ion-mass Raman spectroscopy. Scalability industrial level described here appears be realistic, view rate CO2-laser-induced lack strict sample–environment conditions.