Semiconductor device having backside redistribution layers and method for fabricating the same
作者： Warren Farnworth , Steve Oliver
DOI:
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摘要: Present embodiments relate to a semiconductor device having backside redistribution layer and method for forming such layer. Specifically, one embodiment includes providing substrate comprising via formed therein. The has front side backside. may further include trench on the of substrate, disposing an insulating material in trench, trace over trench.
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