作者: Zhenkun Xie , Zhenxing Yue , Bin Peng , Longtu Li
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摘要: Ferroelectric Bi(Ni1/2Ti1/2)O3?PbTiO3 (BNT?PT) thin films near the morphotropic phase boundary (MPB) with different amount of excess lead (0, 10, and 20%) were successfully deposited onto Pt(111)/Ti/SiO2/Si substrates via a chemical solution approach. The effects on microstructure, dielectric piezoelectric properties, energy-storage performance investigated in detail. X-ray diffraction results revealed that showed an increasing (100)-orientation lead. Dielectric, ferroelectric, current?voltage measurements more exhibited enhanced constant greater back-switch behavior, while smaller leakage current density. As result, density was also markedly improved from 22.8 to 50.2 J/cm3 under electric field 2250 kV/cm. effective d33 increased 41.5 70.1 pm/V 0 20%.