作者: Chi Lu , Zhi Chen , Vijay Singh
DOI: 10.1016/J.SNB.2010.02.034
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摘要: Abstract We report a novel hydrogen-sensitive Schottky-diode device based on an SnO2 film consisting of nanoscale particles and with platinum electrodes top, which has very high response. films were prepared through thermal oxidation metallic Sn films, deposited using electron-beam evaporation thicknesses ranging from 5 nm to 100 nm. The average size the nano-particles shrinks as thickness original decreases. Interdigital (Pt) fabricated for hydrogen sensing studies. Very relative response (current change 168 times) low concentration H2 (100 ppm) was found converted 20 nm-thick as-deposited film. Its speed is also fast, less than 10 s reach half maximum It excellent selectivity CO null CH4. propose that mechanism reduction Schottky barrier height (SBH) at Pt/SnO2 interface. A pinch-off model circuit are presented reveal relationship between or particle size.