作者: Woo-Jin Hwang , Kyu-Sik Shin , Ji-Hyoung Roh , Dae-Sung Lee , Sung-Hoon Choa
DOI: 10.3390/S110302580
关键词:
摘要: One of the key components a chemical gas sensor is MEMS micro-heater. Micro-heaters are used in both semiconductor sensors and NDIR sensors; however they each require different heat dissipation characteristics. For sensors, uniform temperature required over wide area heater. On other hand, for sensor, micro-heater needs high levels infrared radiation order to increase sensitivity. In this study, novel design poly-Si proposed improve uniformity on heating plate. Temperature achieved by compensating variation power consumption around perimeter With compensated design, increased 2.5 times average goes up 40 °C. Therefore, suitable sensor. Meanwhile, without compensation shows higher level under equal conditions. This indicates that more Furthermore, short response time less than 20ms, indicating very efficiency pulse driving.