作者: J.F. Creemer , D. Briand , H.W. Zandbergen , W. van der Vlist , C.R. de Boer
DOI: 10.1016/J.SNA.2008.08.016
关键词: Chemical vapor deposition 、 Metallurgy 、 Microheater 、 Temperature coefficient 、 Materials science 、 Sputtering 、 Silicon nitride 、 Melting point 、 Tin 、 Titanium nitride
摘要: Titanium nitride (TiN) has been investigated as a heater material for microhotplates and microreactors. TiN is available in many CMOS processes, unlike other microheater materials. In addition, very high melting point (2950 ◦C) meaning that it stable up to higher temperatures than platinum (Pt) polysilicon. For the first time, tested inside conventional membrane of LPCVD silicon (SiN). Two types sputtered are considered: stress low stress. Their performance compared with e-beam evaporated Pt. The maximum average temperature heaters 11% those Pt, reaches over 700 ◦C. Failure due rupture membrane. Pt electro-stress migration. high-stress TiN, coefficient resistance almost constant close making suitable sensing. case low-stress (TCR) becomes nonlinear changes sign. large differences between materials explained by grain structure. different structures related sputtering parameters according Thornton model.