作者: K.Y Rajpure , M.N Kusumade , Michael N Neumann-Spallart , C.H Bhosale
DOI: 10.1016/S0254-0584(99)00256-4
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摘要: Abstract Antimony doped SnO2 films have been prepared by spray pyrolysis. The deposited at an optimised substrate temperature of 520°C were found to a resistivity as low 0.4×10−4 Ω cm. Doping concentration Sb in the spraying solution was varied from 0.5 5%, keeping rate constant. sheet resistance 6 Ω cm−2. About 80% average transmission visible region obtained for 1% films. refractive index increased 1.62 2.64 with increasing content 0 5%. Van-der-Pauw’s four probe technique conductivity measurement used measure electrical (σ), Hall coefficient (RH), carrier (n) and mobility (μH) Sb:SnO2 using doping showed best properties.