Electret-based low power resonator for robust pressure sensor
作者： H. Mitsuya , H. Ashizawa , T. Sugiyama , M. Kumemura , M. Ataka
DOI: 10.1109/MEMSYS.2014.6765741
关键词:
摘要: We have developed a membrane-less pressure sensor based on squeeze-film damping in 2-μm driving/sensing gap of silicon ring-shaped resonator. Its sensing range is from sub-atmospheric to over 1MPa; very wide-range measurement possible with one element. An electret film having the 200-V-bias voltage was incorporated resonator; this allows excitation resonator at low AC voltage. This has robust and power consumption (nW-range) characteristics.
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