Method of manufacturing semiconductor device including non-volatile memories and logic devices
作者： Wu Wei Cheng , Teng Li-Feng
DOI:
关键词:
摘要: A semiconductor device includes a non-volatile memory. The memory first dielectric layer disposed on substrate, floating gate the layer, control gate, second between and having one of silicon oxide nitride multilayers nitride, an erase select gate. include stack bottom polysilicon upper metal layer.
lens.org 参考文章(52)
Yuri Tkachev, Jong-Won Yoo, Alexander Kotov, Chien-Sheng Su, Split gate non-volatile flash memory cell having a silicon-metal floating gate and method of making same ,(2013)
Brian A. Winstead, Konstantin V. Loiko, Split gate nanocrystal memory integration ,(2014)
Wen-Tuo Huang, Po-Wei Liu, Yu-Ling Hsu, Yong-Shiuan Tsair, Ming-Huei Shen, Tsun-Kai Tsao, Architecture to Improve Cell Size for Compact Array of Split Gate Flash Cell with Buried Common Source Structure ,(2013)
Harry-Hak-Lay Chuang, Wei Cheng Wu, Flash memory embedded with HKMG technology ,(2014)
Cheng-Yuan Hsu, Chi-Shan Wu, Min-San Huang, Chih-Wei Hung, flash memory cell structure and method of manufacturing and operating the memory cell ,(2003)
Kian Hong Lim, Jianbo Yang, Ling Wu, Sung Mun Jung, Contact strap for memory array ,(2014)
Alexander Kotov, Chien-Sheng Su, Non-volatile Memory Cell Having A High K Dielectric And Metal Gate ,(2012)
Shih Wei Wang, Chun Juang Lin, Multi-Transistor Non-Volatile Memory Element ,(2008)
Danny Pak-Chum Shum, John Power, Method for making semiconductor device ,(2009)
Wen-Tuo Huang, Chieh-Fei Chiu, Po-Wei Liu, Yu-Ling Hsu, Yu-Hsiang Yang, Wen-Ting Chu, Yong-Shiuan Tsair, Methods and Apparatus for Non-Volatile Memory Cells with Increased Programming Efficiency ,(2012)