作者: F Iwata
DOI: 10.1016/J.SSI.2003.08.010
关键词:
摘要: Nanometer-scale observation and modification of NiO films were performed using a novel technique for scanning near-field optical microscopy (SNOM) combined with current-sensing function. The SNOM was newly developed in order to investigate not only local distributions but also electrical properties EC materials. In detect at point on the material surface, cantilever-type metal probe fabricated. could be observed field enhancement effect generated edge under p-polarized laser illumination. regard observation, current signal connected highly sensitive amplifier. surface topography, distribution image colored electrochromic (EC) simultaneously SNOM. Furthermore, nanometer-scale bleaching opens up new fields materials optelectronic applications.