Effect of an InP / In0.53Ga0.47As interface on spin-orbit interaction in In0.52Al0.48As/ In0.53Ga0.47As heterostructures
作者： Yiping Lin , Takaaki Koga , Junsaku Nitta
DOI: 10.1103/PHYSREVB.71.045328
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摘要: We report the effect of insertion an $\mathrm{In}\mathrm{P}∕{\mathrm{In}}_{0.53}{\mathrm{Ga}}_{47}\mathrm{As}$ Interface on Rashba spin-orbit interaction in ${\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As}∕{\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ quantum wells. A small spin split-off energy InP produces a very intriguing band lineup valence bands this system. With or without layer above ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{47}\mathrm{As}$ well, overall values coupling constant $\ensuremath{\alpha}$ turned out to be enhanced diminished for samples with front- back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared results $\mathbf{k}∙\mathbf{p}$ theory. The actual conditions interfaces and materials should account quantitative difference magnitude between measurements calculations.
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