The effect of excess Pb content on the crystallization and electrical properties in sol–gel derived Pb (Zr0.4Ti0.6)O3 thin films

摘要: Abstract The crystallization behavior and electrical properties are closely related to the excess Pb content in PZT (Zr/Ti=40/60) thin films. However, role of crystalline growth has not been precisely defined. In this work, effect on ferroelectric these films was investigated. To analyze effect, containing various amounts Pb, but with same grain size film orientation, were prepared. case derived from solutions a high excess-Pb content, more nuclei formed, grew into smaller-sized grains than low content. On other hand, conversion (100)- (111)-preferred orientation observed as result time-dependent bi-orientational growth. A depth profile analysis using Auger electron spectroscopy revealed that enhanced formation Ti-rich at Pt/PZT interface. This seemed be origin (111) As higher included, showed permittivity, lower distribution space charge layer better resistance against repeating fatigue cycles, due inhibition movement vacancies. These phenomena could applied via oxygen vacancy accumulation