Method for manufacturing a highly integrated semiconductor device having a capacitor of large capacitance

摘要: Disclosed is a method comprising forming first electrode by conductive layer on semiconductor substrate, an etching mask the layer, and defining into cell units; dielectric film second or electrode. Also disclosed structure structure; An insulating including pin holes such as silicon nitride formed layer; which exposed under oxidative atmosphere. The surface portion of oxidized to form oxide islands be used mask. Since requires no specific process conditions, it simple extends effective area capacitor, also applicable various capacitor types.