作者: Sung-un Kwean , Jae-seung Hwang
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摘要: A semiconductor device comprising a borderless contract structure and method of manufacturing the same. An etch-protecting layer is formed on substrate having gate electrodes an active area substrate. Spacers are layer, removed after performing source/drain ion-implantation process to secure region for forming contact hole between electrodes. After sequentially etch-stopping insulating interlayer resultant structure, etched form first which exposes surface second adjacent field oxide portion layer.