Method for preventing borderless contact to well leakage
作者： Derryl J. Allman , Peter McGrath , Shiqun Gu
DOI:
关键词:
摘要: An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one device formed between the trenches. layer over at and oxide. etch stop layer. inter dielectric contact hole etched through layer, partially The filled with conductive material.
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