The sensitivity and spatial resolution dependence on the microstructures of CsI:Tl scintillation layer for X-ray imaging detectors

摘要: Abstract Thallium doped cesium iodide (CsI:Tl) scintillator films for the use as a converter X-ray imaging detectors were fabricated by thermal deposition method. The microstructures of these scintillating layers affected various conditions such vapor pressure, substrate temperature and post-heat treatment or rapid annealing (RTA). CsI(Tl) with polycrystalline structures manufactured under different process prepared experiments. diffraction (XRD) scanning electron microscopy (SEM) used to investigate crystal structure morphology properties. Light output spatial resolution samples strongly microstructures, which are determined treatment. Imaging characteristics CsI:Tl also measured exposure coupling them CCD image sensor.