作者: N.B. Pawar , S.D. Kharade , S.S. Mali , R.M. Mane , C.K. Hong
DOI: 10.1016/J.SOLIDSTATESCIENCES.2014.06.003
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摘要: Abstract Highly ordered quaternary semiconducting MoBi (2− x ) In S 5 nanocrystalline thin films have been successfully synthesized via a relatively simple and convenient Arrested Precipitation Technique (APT). This solution based technique is being scaled up may serve as the basis for next generation of low cost solar cells. Depending on chemical composition synthesis conditions, morphology can be controlled by [In]/[Bi] molar ratio. The structural, morphological, compositional optical absorption properties as-synthesized are characterized using X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), scanning (SEM), field emission (FESEM), energy dispersive spectroscopy (EDS), photoelectron (XPS) UV–Vis–NIR spectrophotometry techniques. photoelectrochemical (PEC) characterization were carried out in 0.05 M I − /I 3 redox electrolyte under dark illuminated conditions. maximum photocurrent density (411 μA/cm 2 obtained ratio [In]/[Bi] = 1 500 W tungsten filament lamp with light intensity 30 mW/cm .