Reference voltage generating circuit of a semiconductor memory device
作者： Dong-Seon Min , Dong-Soo Jeon
DOI:
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摘要: A reference voltage generating circuit of a semiconductor memory device including for producing constant voltage, differential amplifier receiving the as one input, MOS transistor with gate connected to output and channel between power supply terminal divider an input respectively other amplifier, is disclosed. The has resistor ground terminal, being operated in saturation region. proportional inversely resistance load means, thereby keep stable regardless variation temperature manufacturing.
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