作者: Gary O'brien , Andrew B. Graham , Ando Feyh
DOI:
关键词:
摘要: A system and method for forming a sensor device with buried first electrode includes providing silicon portion an layer second layer. The the are adjoined along common oxide formed on of portion. resulting multi-silicon stack lower that is further defined by layer, highly-doped ion implanted region, or combination thereof. has plurality layers dioxide electrically isolated regions in each allowing both upper electrode. spacer enables to be accessible from topside device.