作者: T.U.M.S. Murthy , N. Miyamoto , M. Shimbo , J. Nishizawa
DOI: 10.1016/0022-0248(76)90072-5
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摘要: Abstract Fine particles of silicon, 300 to 800 A in size, have been obtained by nucleation and postgrowth gas-phase during the thermal decomposition silane hydrogen. This phenomenon silicon was found occur at an input concentration exceeding 0.2 vol% 1100°C a conventional horizontal epitaxial reactor. The size shape structure investigated electron microscopy. were be single crystalline mostly defect free with three kinds crystal habits. Around 80% octahedral, followed about 10% tetrahedral smaller number truncated triangular bipyramidal ones. total amount converted has determined increase temperature growth process diffusion controlled.