Gas-phase nucleation during the thermal decomposition of silane in hydrogen

作者: T.U.M.S. Murthy , N. Miyamoto , M. Shimbo , J. Nishizawa

DOI: 10.1016/0022-0248(76)90072-5

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摘要: Abstract Fine particles of silicon, 300 to 800 A in size, have been obtained by nucleation and postgrowth gas-phase during the thermal decomposition silane hydrogen. This phenomenon silicon was found occur at an input concentration exceeding 0.2 vol% 1100°C a conventional horizontal epitaxial reactor. The size shape structure investigated electron microscopy. were be single crystalline mostly defect free with three kinds crystal habits. Around 80% octahedral, followed about 10% tetrahedral smaller number truncated triangular bipyramidal ones. total amount converted has determined increase temperature growth process diffusion controlled.

参考文章(6)
Karl J. Sladek, The Role of Homogeneous Reactions in Chemical Vapor Deposition Journal of The Electrochemical Society. ,vol. 118, pp. 654- 657 ,(1971) , 10.1149/1.2408134
Masashi Kumagawa, Hideo Sunami, Takeshi Terasaki, Jun-ichi Nishizawa, Epitaxial Growth with Light Irradiation Japanese Journal of Applied Physics. ,vol. 7, pp. 1332- 1341 ,(1968) , 10.1143/JJAP.7.1332
Ryozi Uyeda, The morphology of fine metal crystallites Journal of Crystal Growth. pp. 69- 75 ,(1974) , 10.1016/0022-0248(74)90282-6
Frank S. Ham, Theory of diffusion-limited precipitation Journal of Physics and Chemistry of Solids. ,vol. 6, pp. 335- 351 ,(1958) , 10.1016/0022-3697(58)90053-2
Jun-Ichi Nishizawa, Takeshi Terasaki, Masafumi Shimbo, Silicon epitaxial growth Journal of Crystal Growth. ,vol. 17, pp. 241- 248 ,(1972) , 10.1016/0022-0248(72)90253-9
L. P. Hunt, D. H. Sawyer, High Temperature Reactions in the Silicon‐Hydrogen‐Chlorine System Journal of The Electrochemical Society. ,vol. 121, pp. 919- 925 ,(1974) , 10.1149/1.2401953