Gas phase reactivity in chemical vapor deposition
作者： F. Teyssandier , Y.B. Wang
DOI: 10.1016/0257-8972(95)02586-3
关键词:
摘要: The formation of thin films in the conventional thermally activated chemical vapor deposition process is based on heterogeneous reactions involved surface nucleation and growth. As influence homogeneous has often been underestimated, this paper addresses various cases that may be encountered deposition, from standard conditions to highly reactive gas phases. First, influences species are formed during gas-phase transport illustrated by simulation models. case phase leading competing mechanisms between then discussed. Finally, responsible for powder at high temperature supersaturation presented.
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