Substrate pre-treatment by ultrasonication with diamond powder mixtures for nucleation enhancement in diamond film growth

摘要: Abstract Pre-treatment of silicon substrates by ultrasonic abrasion for nucleation enhancement in diamond film formation hot-filament chemical vapour deposition is discussed. Scanning electron microscopy, atomic force microscopy and visible Raman spectroscopy were employed as analysis techniques. Ultrasonication was applied suspensions isopropanol with micro-or nanosized powders, micro-sized metal alumina particles mixtures thereof. The root mean square roughness the ultrasonically pre-treated samples varied from 0.2 to 12.0 nm depending on powder mixture. All that had a larger density than untreated wafer. As expected, an effective increment several orders magnitude application necessary, since generation surface alone not sufficient enhance kinetics satisfactorily. simultaneous action powders large or titanium leads increase up factor 106. When nano-diamond used, embedment fragments best combination grains (50–75 µm) 8 × 109 cm− 2 obtained. After 8 h growth, are significantly smaller demonstrated higher densities, whereas quality layers equal.