Forming method of low dielectric constant amorphous silica coating film, and low dielectric constant amorphous silica coating film obtained from the same method

摘要: PROBLEM TO BE SOLVED: To provide a low dielectric constant amorphous silica coating film in which is small like ≤2.5, Young's elasticity modulus ≥6.0 GPa and further hydrophobicity excellent. SOLUTION: The forming method includes: step (a) of preparing liquid composition containing silicon compound resulting from the hydrolysis tetraalkyl orthosilicate (TAOS) specific alkoxysilane (AS) under presence ammonium hydrooxide (TAAOH), (b) surface wafer with liquid-state composition; (c) applying heating treatment to temperature 80 350°C; (d) burning 350 450°C. COPYRIGHT: (C)2004,JPO