High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications.

摘要: Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices scalable growth high-quality few-layer graphene (FLG) on device-type wafers; it difficult to do so while balancing both quality and affordability. High-quality grown expensive SiC bulk crystals, thin films Si substrates (GOS) exhibits low but affordable cost. We propose a new method FLG template named "hybrid SiC". The hybrid produced by bonding crystal with an wafer subsequently peeling off obtain single-crystalline film wafer. this comparable that crystals much higher than GOS. exhibited high carrier mobilities, those as anticipated from linear band dispersions. Transistors using showed potential operate terahertz frequencies. proposed suited growing desired aim graphene-based high-speed