Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures

Farsane Tabataba-Vakili , Thomas Wunderer , Michael Kneissl , Zhihong Yang
Applied Physics Letters 109 ( 18) 181105

24
2016
Regular silicon pillars and dichroic filters produced via particle-imprinted membranes

Andreas Ladenburger , Anton Reiser , Johannes Konle , Martin Feneberg
Journal of Applied Physics 101 ( 3) 034302

6
2007
Rubidium and Cesium Enediamide Complexes Derived from Bulky 1,4-Diazadienes.

Ramesh Duraisamy , Phil Liebing , Nicole Harmgarth , Volker Lorenz
ACS omega 5 ( 30) 19061 -19069

2020
Negative spin-exchange splitting in the exciton fine structure of AlN

Martin Feneberg , María Fátima Romero , Benjamin Neuschl , Klaus Thonke
Applied Physics Letters 102 ( 5) 052112

15
2013
Polarization-controlled monolithic oxide-confined VCSELs

Rainer Michalzik , Johannes M. Ostermann , Pierluigi Debernardi , Christof Jalics
Micro-Optics, VCSELs, and Photonic Interconnects 5453 182 -196

5
2004
High quality GaN layers grown on slightly miscut sapphire wafers

Peter Brüeckner , Martin Feneberg , Klaus Thonke , Frank Habel
MRS Proceedings 892 ( 1) 460 -465

4
2005
Piezoelectric Fields in Tilted GaInN Quantum Wells

Martin Feneberg , Frank Lipski , Rolf Sauer , Klaus Thonke
MRS Proceedings 955 ( 1) 1 -4

2006
Transition energies and direct-indirect band gap crossing in zinc-blende Al x Ga 1-x N

M. Landmann , E. Rauls , W. G. Schmidt , Marcus Röppischer
Physical Review B 87 ( 19) 195210

34
2013
Anisotropic absorption and emission of bulk(11¯00)AlN

Martin Feneberg , María Fátima Romero , Marcus Röppischer , Christoph Cobet
Physical Review B 87 ( 23) 235209

50
2013
Optical properties of In2O3 from experiment and first-principles theory: Influence of lattice screening

André Schleife , Maciej D Neumann , Norbert Esser , Zbigniew Galazka
New Journal of Physics 20 ( 5) 053016

11
2018
Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate

Thomas Wunderer , Zhihong Yang , Martin Feneberg , Max Batres
Applied Physics Letters 111 ( 11) 111101

8
2017
Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Elias Baron , Rüdiger Goldhahn , Michael Deppe , Donat J. As
Physica Status Solidi B-basic Solid State Physics 257 ( 4) 1900522

1
2020
Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers

Yong Xie , Wanqi Jie , Anton Reiser , Martin Feneberg
Materials Letters 83 31 -34

1
2012
Excitonic recombination in epitaxial lateral overgrown AlN on sapphire

Christoph Reich , Martin Feneberg , Viola Kueller , Arne Knauer
Applied Physics Letters 103 ( 21) 212108

14
2013
Anisotropy of effective electron masses in highly doped nonpolar GaN

Martin Feneberg , Karsten Lange , Christian Lidig , Matthias Wieneke
Applied Physics Letters 103 ( 23) 232104

33
2013
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin

Shaojun Wu , Martin Guttmann , Neysha Lobo-Ploch , Frank Gindele
Semiconductor Science and Technology 37 ( 6) 065019

3
2022
Synthesis and Structural Characterization of Divalent Transition Metal Alkynylamidinate Complexes

Sida Wang , Phil Liebing , Martin Feneberg , Farid M Sroor
European Journal of Inorganic Chemistry 26 ( 14) e202300027

2023
Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets

Thomas Wunderer , Joaquim Hertkorn , Frank Lipski , Peter Brückner
Gallium Nitride Materials and Devices III 6894 145 -153

18
2008
Bluish‐green semipolar GaInN/GaN light emitting diodes on 1 ̄1 01 GaN side facets

Thomas Wunderer , Frank Lipski , Joachim Hertkorn , Peter Brückner
physica status solidi c 5 ( 6) 2059 -2062

12
2008