Sen Mei
机构: Singapore University of Technology and Design
每年引用次数
引用次数
引用: 284
H-指数: 10
I10-指数 : 10
出版物: 26
Observation of resistive switching by physical analysis techniques
K. L. Pey , S. Mei , A. Ranjan , N. Raghavan
international symposium on next generation electronics 1 -2
2016
Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films.
A. Ranjan , N. Raghavan , S. J. O’Shea , S. Mei
Scientific Reports 8 ( 1) 2854 -2854
55
2018
Multiphysics based 3D percolation framework model for multi-stage degradation and breakdown in high-κ — Interfacial layer stacks
S. Mei , N. Raghavan , K. Shubhakar , M. Bosman
international reliability physics symposium
2016
Statistical basis and physical evidence for clustering model in FinFET degradation
S. Mei , N. Raghavan , M. Bosman , K.L. Pey
international reliability physics symposium
2017
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics
A. Ranjan , N. Raghavan , S.J. O'Shea , S. Mei
international reliability physics symposium 4
7
2018
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device
L. Luo , K. Shubhakar , S. Mei , N. Raghavan
international reliability physics symposium 1 -6
2020
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress
X. Feng , N. Raghavan , S. Mei , S. Dong
Microelectronics Reliability ( 88) 164 -168
1
2018
Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
J.H. Lim , N. Raghavan , S. Mei , K.H. Lee
Microelectronic Engineering 178 308 -312
7
2017
3D characterization of hard breakdown in RRAM device
S. Mei , M. Bosman , K. Shubhakar , N. Raghavan
Microelectronic Engineering 216 111042
1
2019
Stochastic Modeling of FinFET Degradation Based on a Resistor Network Embedded Metropolis Monte Carlo Method
S. Mei , N. Raghavan , M. Bosman , K. L. Pey
IEEE Transactions on Electron Devices 65 ( 2) 440 -447
4
2018
Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight
K. Shubhakar , S. Mei , M. Bosman , N. Raghavan
Microelectronics Reliability 64 204 -209
8
2016
Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics
A. Ranjan , N. Raghavan , F. M. Puglisi , S. Mei
IEEE Electron Device Letters 40 ( 8) 1321 -1324
3
2019
Control gate dummy for word line uniformity and method for producing the same
Sen Mei , Fan Zhang , Laiqiang Luo , Pinghui Li
2019
Dynamic investigation of interface atom migration during heterostructure nanojoining
Sen Mei , Longbing He , Xing Wu , Jun Sun
Nanoscale 6 ( 1) 405 -411
6
2014
Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices
Xing Wu , Sen Mei , Michel Bosman , Nagarajan Raghavan
Advanced electronic materials 1 ( 11) 1500130
19
2015
New Insights into Dielectric Breakdown of MgO in STT-MRAM Devices
Kin Leong Pey , Jia Hao Lim , Nagarajan Raghavan , Sen Mei
2019 Electron Devices Technology and Manufacturing Conference (EDTM) 264 -266
3
2019
Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology
Laiqiang Luo , Kalya Shubhakar , Sen Mei , Nagarajan Raghavan
IEEE Transactions on Device and Materials Reliability 18 ( 1) 64 -69
2
2018
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices
Sen Mei , Michel Bosman , Raghavan Nagarajan , Xing Wu
Microelectronics Reliability 61 ( 61) 71 -77
15
2016
Statistical Modeling of Degradation Behavior in Split-Gate Non-Volatile Memory Devices
Shubhakar Kalya , Sen Mei , Laiqiang Luo , Nagarajan Raghavan
Available at SSRN 4429240
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction
Jia Hao Lim , Nagarajan Raghavan , Sen Mei , Vinayak Bharat Naik
international reliability physics symposium 6
2
2018